, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 repetitive avalanche and dv/dt rated* im-chaimnel 400 volt, 1.8 ohm hexfet to-220ab plastic package product summary the hexfet transistors also feature all of the well established advantages of mosfets such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. part number IRF720 irf721 irf722 (rf723 ' bvdss 400v 350v 400v 350v rds(on) 1.8q 1.80 2.50 2.5(1 "d 3.3a 3.3a 2.8a 2.8a features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? simple drive requirements ? ease of paralleling case style and dimensions 10.54 (0.415) r i ? f 13.97 (0.550) max. 1 max. ~~ t - 1 15.09 (0.594) max. i ? ft i i i ? r ? 2.1! 10 1131 2(210.103) tt 1 } um- 139! 13.4! os941 _ i054i0.4isi _. 10.29 (0 4dil " 3.71 10.1491 ?,. 3 54 10.1391 u" it0 1.1 ? i 1sso) osioi | j (045)min. j-*? i tekm4- 0(i?in | 648i025sj fitiotfl ^ 3mihissi 3 44 |s hoi i || v- i2zi0041) term3 -source term 2 -d?ain term 1 - gate , \ \/ (0.160) i am * 43zfo.uo) 1 2.79(0.110) ??(omq) 1 ibi *83( \ ll\ \ 210) '190) ^section x-x si!srh 0939( co* styl. to-220ab oimeniioni in millimeters and llnchn) 037} ?this data sheet applies to product with batch codes that begin with a digit, a. 2a3b nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished h> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF720, irf721, irf722, irf723 devices absolute maximum ratings parameter id ? tc ? 25c continuous drain current id ? tc " 100c continuous drain current iom pulsed drain current (0 po @ ^c = 25c max. fbwer dissipation linear derating factor vqs gate-to-source voltage eas single pulsa avalanche energy i ar avalanche current ? (repetitive or non-repetitive) ear repetitive avalanche energy cd jv/ctt - peak diode recovery rfv/dt 0) tj operating junction tstg storage temperature range lead temperature IRF720, irf721 3.3 2.1 13 irf722. irr23 2.8 . . 1.8 . - - 11 60 ' 0.40 20 190 {see fig. 14) 3.3 (see ear) 5.0 (see iar) 4.0 (see rg. 17) -66 to 150 300 (0.063 in. 0.6mm) from case lor 10s) units a a a w vwk? v mj a mj vfns c c electrical characteristics @ t, = 25c (unless otherwise specified) parameter bvoss drain-to-source breakdown voltage fine/nut static drain-to-source on-state resistance 9) 'dion) on-state drain current ? vgs(th) gate threshold voltage gfs forward transconductance ? 'dss ze[0 gate voltagu drain current 1gss gate-to-source leakage forward iqss gate-to-source leakage reverse qg total gate charge qgs gate-to-source charge qgd gate-to-draln ("mlller'1 charge 'dtonl turn-on delay time t, rise time 'd(off) turn-off delay time t| fall time lrj internal drain inductance lg internal source inductance cjgg input capacitance cos3 output capacitance crss reverse transfer capacitance type IRF720 irf722 irf721 irf723 IRF720 irf72i irf722 irf723 irr20 irr21 irf722 irf723 all all all all all all all all all all all all all all all all win. 400 350 - - 3.3 2.b 2.0 1.8 - ? - - - - - - - - - - - - typ. - 1.6 1.8 - - 2.7 - ? - - 13 2.2 7.2 10 14 30 13 4.5 7.6 350 64 8.1 max. - 1.8 2.5 - 4.0 - 250 1000 500 -500 20 3.3 11 15 21 45 20 - -- - units v 0 a v sid) lia na na nc nc nc ns ns ns ns nh nh pf pf pf test conditions vgs - ov, id - 250 ^a vgs - iov, id = i.sa vds > bton) x "dsion) max. vgs = 10v vds = vgs. 'd - zs
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